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  http:// ww w.weitron.com.tw weitron wsd520g small signal schottky diodes 100m amperes 30 volts description: feature: surface mount schottky a b c d e j k 0.95 0.55 0.49 0.25 0.15 0.08 1.35 1.05 0.65 0.55 0.32 0.25 0.15 1.45 sod-723 outline dimensions sod-723 dim min max barrier diodes 1 2 sod-723 lea d(pb)-free p b * ultra small mold type * low i r * high reliability low current rectification pin 1. cathode 2. anode a b d j c e 2x ?y? ?x? 0.08 x k y 1/ 21-oct-2010 0.45 0.50 1.1 scale 10:1 soldering footprint
weitron device marking item wsd520g marking eqivalent circuit diagram http://www.weitron.com.tw wsd520g e 2 1 2/ 21-oct-2010 maximum ratings (t a =25?c unless otherwise noted) (t a =25?c unless otherwise noted) characteristic characteristic dc reverse voltage peak forward surge current storage temperature range forward voltage i f =10ma reverse leakage v r =10v symbol symbol min typ max t stg v f i r i fsm 500 100 30 i o v r value unit unit -40 to +125 ?c operation junction temperature range t j 125 0.45 0.5 - - - - ?c ma ma v v a electrical characteristics
weitron .weitron.com.tw electrical characteristic curves (t =25c) a 3/4 21-oct-2010 forward volt agevf( mv) vf-if characteristics forward current:if ( ma) reverse current:ir ( na) reverse voltage vr (v ) vr-ir characteristics capacitance between terminals:ct ( pf) rever se voltage:vr(v ) vr-ct characteristics vf dispersion map forward voltage:vf ( mv) rev er se curre nt:ir ( na) ir dispersion map capa citance between terminals:ct ( pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm ( a) peak surge forward c ur rent:ifs m( a) number of cycles ifsm-cycle charac te ristics peak surge forward c ur rent:ifs m( a) tim e:t ( ms) ifsm-t characteristics time:t ( s) rth-t characteri s tics transient thaermal impedance:rth ( /w) forward power dissipation:pf ( w) ave ra ge rectified forward current i o(a ) io-pf characteristics reverse power dissipation:p r ( w) rever se voltage:vr(v ) vr-p r characteristics wsd520g http://www 0. 001 0.01 0.1 1 10 100 1000 0 100 20 0 300 400 50 0 600 1 10 100 10 00 100 00 1000 00 10000 00 0 10 20 30 1 10 100 0 5 10 15 20 f=1mh 320 330 340 350 360 370 ta= 25 if =1 0ma n= 30p cs 0 100 200 300 400 500 600 700 800 900 1000 ave:100.5na ta=25 vr=10v n =30p cs 10 11 12 13 14 15 16 17 18 19 20 av e:15. 94p f ta=25 f=1mhz vr=0v n =10p cs 0 5 10 15 20 ave:3.90a 8.3 ms ifsm 1cyc 0 5 10 1 10 100 8.3 ms ifsm 1cyc 8.3 ms 0 5 10 1 10 100 t ifsm 10 100 1 000 0. 001 0.1 10 1000 rth ( j-a) rth (j-c) 1m im=10ma if =100ma 300u time mounted on e po xy b oa rd 0 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 ave: 33 8.8mv ta= -25 ta= 125 ta =75 ta= 25 ta=-25 ta=1 25 ta=25 ta=75 dc d =1/2 sin (? 180) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 sin (? 180) dc d= 1/2
wsd520g http:// www weitron .weitron.com.tw 4/4 21-oct-2010 ambient temperature:ta() derating curve?(io-ta) average rectifi forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.1 0.2 0.3 0 25 50 75 100 125 0 0.1 0.2 0.3 0255075100125 t tj=125 d=t/t t vr io vr=15v 0a 0v t tj=125 d=t/t t vr io vr=15v 0a 0v sin(?180) dc d=1/2 sin(?180) dc d=1/2


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